A short-channel DC SPICE model for polysilicon thin-film transistors including temperature effects

Author

Jacunski, Mark D. ; Shur, Michael S. ; Owusu, Albert A. ; Ytterdal, Trond ; Hack, Michael ; Iniguez, B.

Author_Institution

Dept. of Electr. Eng., Virginia Univ., Charlottesville, VA, USA

Volume

46

Issue

6

fYear

1999

fDate

6/1/1999 12:00:00 AM

Firstpage

1146

Lastpage

1158

Abstract

A semi-empirical analytical model for the DC characteristics of both n- and p-channel polysilicon thin-film transistors is described. The model is suitable for implementation in a SPICE circuit simulator. Our semi-empirical approach results in a physically based model with a minimum of parameters, which are readily related to the device structure and fabrication process. The intrinsic DC model describes all four regimes of operation: leakage, subthreshold, above threshold, and kink. The effects of temperature and channel length are also included in the short-channel model

Keywords

SPICE; elemental semiconductors; leakage currents; semiconductor device models; silicon; thin film transistors; DC characteristics; Si; above threshold regime; channel length; circuit simulator; device structure; fabrication process; intrinsic DC model; kink regime; leakage regime; physically based model; polysilicon thin-film transistors; semi-empirical analytical model; short-channel DC SPICE model; subthreshold regime; temperature effects; Active matrix liquid crystal displays; Analytical models; Circuit simulation; Computer hacking; Costs; Driver circuits; HDTV; SPICE; Temperature; Thin film transistors;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.766877

Filename

766877