Shot-noise-induced excess low-frequency noise in floating-body partially depleted SOI MOSFET´s

Author

Jin, Wei ; Chan, Philip C.H. ; Fung, Samuel K H ; Ko, Ping K.

Author_Institution

Dept. of Electr. & Electron. Eng., Hong Kong Univ. of Sci. & Technol., Kowloon, Hong Kong

Volume

46

Issue

6

fYear

1999

fDate

6/1/1999 12:00:00 AM

Firstpage

1180

Lastpage

1185

Abstract

Floating-body partially depleted (PD) SOI MOSFET´s exhibit excess low-frequency noise. For the first time, the origin of the excess noise is identified to be the shot noise associated with impact ionization current and body-source diode current. The shot noise, normally negligible as compared with flicker noise, is amplified in the device through the floating-body effect (FEE). A physically-based noise model is proposed which predicts that the excess low-frequency noise shows a Lorentzian-like spectrum as verified by experimental data. The physical explanation is further supported by the coincidence of the characteristic frequency in noise spectrum and AC output impedance of the device

Keywords

MOSFET; equivalent circuits; flicker noise; impact ionisation; semiconductor device models; semiconductor device noise; shot noise; silicon-on-insulator; AC output impedance; Lorentzian-like spectrum; Si; body-source diode current; characteristic frequency; excess LF noise; floating-body SOI MOSFET; impact ionization current; low-frequency noise; partially depleted SOI MOSFET; physically-based noise model; shot-noise-induced LF noise; 1f noise; Circuit noise; Frequency; Impact ionization; Impedance; Low-frequency noise; MOSFET circuits; Noise generators; Semiconductor device noise; Thermal resistance;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.766881

Filename

766881