DocumentCode
1512696
Title
A simple hole scattering length model for the solution of charge transport in bipolar transistors
Author
Datta, K. ; Kumar, M. Jagadesh
Author_Institution
Dept. of Electr. Eng., Indian Inst. of Technol., New Delhi, India
Volume
46
Issue
6
fYear
1999
fDate
6/1/1999 12:00:00 AM
Firstpage
1186
Lastpage
1188
Abstract
Considering the small warping parabolic heavy hole model with the quasi-elastic approximation in acoustic phonon scattering, it is shown that the hole scattering length is independent of the hole energy. This result now makes it possible to solve the Boltzmann transport equation to obtain a simple analytical solution for the ballistic hole transport in a thin and uniformly doped base of a pnp transistor
Keywords
Boltzmann equation; bipolar transistors; electron-phonon interactions; semiconductor device models; Boltzmann transport equation; acoustic phonon scattering; ballistic transport; bipolar transistor; hole scattering length; parabolic heavy hole model; pnp transistor; quasi-elastic approximation; Acoustic devices; Acoustic emission; Acoustic scattering; Ballistic transport; Bipolar transistors; Boltzmann equation; Boundary conditions; Effective mass; Electrons; Phonons;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/16.766882
Filename
766882
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