Title :
A simple hole scattering length model for the solution of charge transport in bipolar transistors
Author :
Datta, K. ; Kumar, M. Jagadesh
Author_Institution :
Dept. of Electr. Eng., Indian Inst. of Technol., New Delhi, India
fDate :
6/1/1999 12:00:00 AM
Abstract :
Considering the small warping parabolic heavy hole model with the quasi-elastic approximation in acoustic phonon scattering, it is shown that the hole scattering length is independent of the hole energy. This result now makes it possible to solve the Boltzmann transport equation to obtain a simple analytical solution for the ballistic hole transport in a thin and uniformly doped base of a pnp transistor
Keywords :
Boltzmann equation; bipolar transistors; electron-phonon interactions; semiconductor device models; Boltzmann transport equation; acoustic phonon scattering; ballistic transport; bipolar transistor; hole scattering length; parabolic heavy hole model; pnp transistor; quasi-elastic approximation; Acoustic devices; Acoustic emission; Acoustic scattering; Ballistic transport; Bipolar transistors; Boltzmann equation; Boundary conditions; Effective mass; Electrons; Phonons;
Journal_Title :
Electron Devices, IEEE Transactions on
