DocumentCode :
151274
Title :
Design and operation of A 3.6kV high performance solid state transformer based on 13kV SiC MOSFET and JBS diode
Author :
Fei Wang ; Gangyao Wang ; Huang, A. ; Wensong Yu ; Xijun Ni
Author_Institution :
Dept. of Electr. & Comput. Eng., North Carolina State Univ., Raleigh, NC, USA
fYear :
2014
fDate :
14-18 Sept. 2014
Firstpage :
4553
Lastpage :
4560
Abstract :
This paper presents the development of a distribution network solid state transformer (SST) based on high voltage (13kV) SiC MOSFET and JBS diode. This distribution SST is composed with a medium voltage ac/dc rectifier, medium voltage medium frequency dc/dc converter and a low voltage inverter. It´s able to be interfaced to 3.6kV distribution grid and output both a 400V dc and 240/120V ac. This paper presents the characterization of the high voltage SiC MOSFET devices, and the design of rectifier and dc/dc converter. The test results of its grid-connected operation including pre-charge, start up, regeneration, etc. are included to show the functionalities of the designed SST prototype.
Keywords :
DC-DC power convertors; MOSFET circuits; Schottky diodes; invertors; power MOSFET; rectifying circuits; silicon compounds; wide band gap semiconductors; JBS diode; MOSFET; SiC; distribution network solid state transformer; high performance solid state transformer; junction-barrier Schottky diode; low voltage inverter; medium voltage AC-DC rectifier; medium voltage medium frequency DC-DC converter; voltage 120 V; voltage 13 kV; voltage 240 V; voltage 3.6 kV; voltage 400 V; Capacitors; Inductors; Logic gates; MOSFET; Silicon carbide; Switches; Zero voltage switching;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Energy Conversion Congress and Exposition (ECCE), 2014 IEEE
Conference_Location :
Pittsburgh, PA
Type :
conf
DOI :
10.1109/ECCE.2014.6954024
Filename :
6954024
Link To Document :
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