Title :
Nanocrystalline Si-Based Resistive Humidity Sensors Prepared via HWCVD at Various Filament Temperatures
Author :
Hsueh, T.J. ; Chen, Y.H. ; Weng, W.Y. ; Tsai, T.Y. ; Hsueh, H.T. ; Hus, C.L. ; Dai, B.T. ; Shieh, J.M.
Author_Institution :
Nat. Nano Devices Labs., Tainan, Taiwan
fDate :
6/1/2012 12:00:00 AM
Abstract :
The growth of nanocrystalline Si on glass substrates via hot-wire chemical vapor deposition (HWCVD) at various filament temperatures and the fabrication of nanocrystalline Si-based resistive humidity sensors are reported. Experimental results indicate that the average diameter of nanocrystalline Si particles increases with increasing filament temperature. Measurements of the resistivity change of samples with humidity at 25°C show that the sensor response of samples fabricated at high filament temperatures is lower than that of samples fabricated at low filament temperatures. The sensitivity of the sensor increases with relative humidity.
Keywords :
chemical vapour deposition; elemental semiconductors; humidity sensors; nanostructured materials; silicon; HWCVD; Si; filament temperature; glass substrate; hot-wire chemical vapor deposition; nanocrystalline silicon; relative humidity; resistive humidity sensor; temperature 25 C; Humidity; Humidity measurement; Silicon; Temperature; Temperature measurement; Temperature sensors; Humidity; hot-wire chemical vapor deposition (HWCVD); nanocrystalline; silicon;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2012.2192711
