Title :
Floating-Body Kink-Effect-Related Parasitic Bipolar Transistor Behavior in Poly-Si TFT
Author :
Liu, Tony C. ; Kuo, James B. ; Zhang, Shengdong
Author_Institution :
Sch. of Inf. Eng., Peking Univ., Shenzhen, China
fDate :
6/1/2012 12:00:00 AM
Abstract :
This letter reports the floating-body kink-effect-related parasitic bipolar transistor (PBT) behavior in the poly-Si TFT. As verified by the experimentally measured data and 2-D simulation result using the discrete grain/discrete energy level distributed trap approach, different from traditional bipolar junction transistor where it is dominated by diffusion, the current conduction in the PBT is dominated by drift and leading to a smaller current gain at a large drain voltage due to the dominance of impact-ionization-generated holes.
Keywords :
bipolar transistors; silicon; thin film transistors; 2-D simulation; PBT; Si; current gain; discrete grain-discrete energy level distributed trap approach; floating-body kink-effect-related parasitic bipolar transistor behavior; impact-ionization-generated holes; large drain voltage; poly-Si TFT; Grain boundaries; Integrated circuits; Silicon; Simulation; Thin film transistors; Voltage measurement; Floating-body effect; kink effect; parasitic bipolar transistor (PBT); polycrystalline silicon thin-film transistor (poly-Si TFT);
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2012.2192495
