Floating-Body Kink-Effect-Related Parasitic Bipolar Transistor Behavior in Poly-Si TFT

Author

Liu, Tony C. ; Kuo, James B. ; Zhang, Shengdong

Author_Institution

Sch. of Inf. Eng., Peking Univ., Shenzhen, China

Volume

33

Issue

6

fYear

2012

fDate

6/1/2012 12:00:00 AM

Firstpage

842

Lastpage

844

Abstract

This letter reports the floating-body kink-effect-related parasitic bipolar transistor (PBT) behavior in the poly-Si TFT. As verified by the experimentally measured data and 2-D simulation result using the discrete grain/discrete energy level distributed trap approach, different from traditional bipolar junction transistor where it is dominated by diffusion, the current conduction in the PBT is dominated by drift and leading to a smaller current gain at a large drain voltage due to the dominance of impact-ionization-generated holes.

Keywords

bipolar transistors; silicon; thin film transistors; 2-D simulation; PBT; Si; current gain; discrete grain-discrete energy level distributed trap approach; floating-body kink-effect-related parasitic bipolar transistor behavior; impact-ionization-generated holes; large drain voltage; poly-Si TFT; Grain boundaries; Integrated circuits; Silicon; Simulation; Thin film transistors; Voltage measurement; Floating-body effect; kink effect; parasitic bipolar transistor (PBT); polycrystalline silicon thin-film transistor (poly-Si TFT);

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2012.2192495

Filename

6197217