Title :
Pentacene organic thin-film transistors for circuit and display applications
Author :
Klauk, Hagen ; Gundlach, David J. ; Nichols, Jonathan A. ; Jackson, Thomas N.
Author_Institution :
Center for Thin Film Devices, Pennsylvania State Univ., University Park, PA, USA
fDate :
6/1/1999 12:00:00 AM
Abstract :
We have fabricated organic thin-film transistors (TFT´s) using the small-molecule polycyclic aromatic hydrocarbon pentacene as the active material. Devices were fabricated on glass substrates using low-temperature ion-beam deposited silicon dioxide as the gate dielectric, ion-beam deposited palladium for the source and drain contacts, and vacuum-evaporated pentacene to form the active layer. Excellent electrical characteristics were obtained, including carrier mobility as large as 0.6 cm2/V-s, on/off current ratio as large as 108, and subthreshold slope as low as 0.7 V/dec, all record values for organic transistors fabricated on nonsingle-crystal substrates
Keywords :
MOSFET; carrier mobility; liquid crystal displays; organic semiconductors; thin film transistors; Pd; Pd drain contact; Pd source contact; SiO2; carrier mobility; circuit applications; display applications; electrical characteristics; gate dielectric; glass substrates; ion-beam deposited Pd; low-temperature ion-beam deposited SiO2; on/off current ratio; organic active material; organic thin-film transistors; pentacene organic TFT; polycyclic aromatic hydrocarbon; subthreshold slope; vacuum-evaporated pentacene; Circuits; Dielectric materials; Dielectric substrates; Displays; Glass; Hydrocarbons; Organic materials; Organic thin film transistors; Pentacene; Thin film transistors;
Journal_Title :
Electron Devices, IEEE Transactions on
