DocumentCode
1512787
Title
Analytical model for the electric field distribution in SOI RESURF and TMBS structures
Author
Merchant, Steve
Author_Institution
Semicond. Products Sector, Motorola Inc., Mesa, AZ, USA
Volume
46
Issue
6
fYear
1999
fDate
6/1/1999 12:00:00 AM
Firstpage
1264
Lastpage
1267
Abstract
A simple analytical model for the electric field distribution in silicon-on-insulator (SOI) reduced surface field (RESURF) structures is developed. The model applies for uniform and linearly graded doping profiles. It is also applicable to trench MOS barrier Schottky (TMBS) rectifiers, which have a similar structure. The results are valuable for breakdown voltage, tunneling, hot carrier, and other electric field dependent analyses
Keywords
Schottky diodes; doping profiles; power semiconductor diodes; semiconductor device models; silicon-on-insulator; solid-state rectifiers; SOI RESURF; Si; TMBS; analytical model; breakdown voltage; doping profile; electric field distribution; hot carriers; silicon-on-insulator reduced surface field structure; trench MOS barrier Schottky rectifier; tunneling; Analytical models; Boundary conditions; Doping profiles; Electrostatics; Low voltage; Poisson equations; Rectifiers; Semiconductor process modeling; Silicon on insulator technology; Tunneling;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/16.766896
Filename
766896
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