Title :
Analytical model for the electric field distribution in SOI RESURF and TMBS structures
Author_Institution :
Semicond. Products Sector, Motorola Inc., Mesa, AZ, USA
fDate :
6/1/1999 12:00:00 AM
Abstract :
A simple analytical model for the electric field distribution in silicon-on-insulator (SOI) reduced surface field (RESURF) structures is developed. The model applies for uniform and linearly graded doping profiles. It is also applicable to trench MOS barrier Schottky (TMBS) rectifiers, which have a similar structure. The results are valuable for breakdown voltage, tunneling, hot carrier, and other electric field dependent analyses
Keywords :
Schottky diodes; doping profiles; power semiconductor diodes; semiconductor device models; silicon-on-insulator; solid-state rectifiers; SOI RESURF; Si; TMBS; analytical model; breakdown voltage; doping profile; electric field distribution; hot carriers; silicon-on-insulator reduced surface field structure; trench MOS barrier Schottky rectifier; tunneling; Analytical models; Boundary conditions; Doping profiles; Electrostatics; Low voltage; Poisson equations; Rectifiers; Semiconductor process modeling; Silicon on insulator technology; Tunneling;
Journal_Title :
Electron Devices, IEEE Transactions on
