Temperature dependence characterization of effective electron and hole mobilities in the accumulation layers of n- and p-type MOSFET´s

Experimental results for the MOS electron and hole accumulation layer mobilities (μ_acc), measured for a wide range of doping concentrations (1×10¹⁶ cm^-3-4×10¹⁷ cm^-3) and at temperatures ranging from 25°C to 150°C, indicate a “universal behavior” at high effective fields and over the temperature range of the measurement, similar to that of MOS inversion carriers. At low to moderate transverse fields, μ_acc is found to be greater than the bulk mobility at lower temperatures, and gradually decreases toward the bulk mobility values with the increasing lattice temperature. However, for lower doping levels, μ_acc is found to be lower than the bulk mobility values at all temperatures and effective fields