Title :
85/spl deg/C investigation of uncooled 10-Gb/s directly modulated InGaAsP RWG GC-DFB lasers
Author :
White, J.K. ; Blaauw, C. ; Firth, P. ; Aukland, P.
Author_Institution :
High Performance Opt. Component Solutions, Nortel Networks, Ottawa, Ont., Canada
Abstract :
The 10-Gb/s directly modulated performance of InGaAsP ridge waveguide (RWG) gain coupled (GC) DFB lasers is investigated up to 85/spl deg/C. At room temperature, devices have relaxation oscillation frequencies f/sub relax/ greater than 20 GHz and damping /spl Gamma/ greater than 100 GHz, f/sub relax/ is greater than 6 GHz at 85/spl deg/C. Constant output power or extinction ratio are possible from 25/spl deg/C to 75/spl deg/C chip temperature, with open eyes observable up to 85/spl deg/C. Back-to-back transmission measurements in a Nortel Networks OC-192 system show error free transmission of a 2/sup 23/-1 pseudorandom bit sequence at 83/spl deg/C.
Keywords :
III-V semiconductors; distributed feedback lasers; gallium arsenide; gallium compounds; indium compounds; optical testing; optical transmitters; quantum well lasers; ridge waveguides; semiconductor device testing; waveguide lasers; 10 Gbit/s; 25 C; 25 to 75 C; 83 C; 85 C; InGaAsP; InGaAsP RWG GC-DFB lasers; Nortel Networks OC-192 system; back-to-back transmission measurements; chip temperature; constant output power; directly modulated; error free transmission; extinction ratio; gain coupled; open eyes; pseudorandom bit sequence; relaxation oscillation frequencies; room temperature; uncooled; Damping; Extinction ratio; Eyes; Frequency; Optical coupling; Performance gain; Power generation; Semiconductor device measurement; Temperature; Waveguide lasers;
Journal_Title :
Photonics Technology Letters, IEEE
