DocumentCode :
1512914
Title :
Symmetric Vertical-Channel Nickel-Salicided Poly-Si Thin-Film Transistors With Self-Aligned Oxide Overetching Structures
Author :
Wu, Yi-Hong ; Kuo, Po-Yi ; Lu, Yi-Hsien ; Chen, Yi-Hsuan ; Chiang, Tsung-Yu ; Wang, Kuan-Ti ; Yen, Li-Chen ; Chao, Tien-Sheng
Author_Institution :
Dept. of Electrophys., Nat. Chiao Tung Univ., Hsinchu, Taiwan
Volume :
58
Issue :
7
fYear :
2011
fDate :
7/1/2011 12:00:00 AM
Firstpage :
2008
Lastpage :
2013
Abstract :
This paper reports the impacts of NH3 plasma treatment time, oxide overetching depth, and gate oxide thickness on symmetric vertical-channel Ni-salicided poly-Si thin-film transistors (VSA-TFTs) for the first time. off-state currents may be improved by increasing the oxide overetching depth. The on/ off current ratio may be also improved by increasing the oxide overetching depth. The NH3 plasma optimum treatment time of VSA-TFTs is significantly shorter than that of conventional top-gate horizontal-channel TFTs. The performance of VSA-TFTs is degraded by NH3 plasma treatment for too long a time. VSA-TFTs with 15-nm gate oxide thickness display better subthreshold swing (<; 150 mV/dec) than VSA-TFTs with 30-nm gate oxide thickness. off-state currents can be improved by increasing Lmask, even when the oxide overetching depth and the gate oxide thickness are changed.
Keywords :
nickel; nitrogen compounds; silicon; thin film transistors; NH3; Si; gate oxide thickness; off-state currents; on-off current ratio; oxide overetching depth; plasma optimum treatment time; self-aligned oxide overetching structures; size 15 nm; size 30 nm; symmetric vertical-channel polycrystalline thin-film transistors; Leakage current; Logic gates; Plasmas; Silicon; Thin film transistors; $hbox{NH}_{3}$ plasma treatment; Ni-salicided; oxide overetching depth; polycrystalline-silicon thin-film transistors (poly-Si TFTs); vertical channel; vertical-channel Ni-salicided poly-Si TFTs (VSA-TFTs);
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/TED.2011.2142312
Filename :
5765490
Link To Document :
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