Realization and characterization of an IGBT module based on the power chip-on-chip 3D concept

With the emergence of new power semiconductor devices, the switching speeds in power converters are increasing. The stray inductances of switching cells must therefore be minimized to limit the over-voltages on transistors. One relatively new approach, called Power Chip-on-Chip (PCoC), considers the integration of power dies, one on top of the other, directly in the busbar. This allows for the reduction of the stray inductance. This paper first presents the implementation of a PCoC module using classical packaging techniques. Then a description of the different technological steps for the realization is outlined. Finally, experimental characterizations show the interest of the proposed PCoC module compared with planar ones.