DocumentCode :
1512936
Title :
Author :
Kim, Joohwa ; Dabag, Hayg ; Asbeck, Peter ; Buckwalter, James F.
Author_Institution :
Electr. & Comput. Eng. Dept., Univ. of California at San Diego, La Jolla, CA, USA
Volume :
60
Issue :
6
fYear :
2012
fDate :
6/1/2012 12:00:00 AM
Firstpage :
1870
Lastpage :
1877
Abstract :
The performance of high-efficiency millimeter-wave (mm-wave) power amplifiers (PAs) implemented in a 45-nm silicon-on-insulator (SOI) process is presented. Multistage class-AB designs are investigated for Q- and W-bands and a push-pull amplifier is investigated at Q-band. The Q-band, class-AB PA achieves a saturated output power of 15 dBm and power-added efficiency (PAE) of 27% from a 2-V supply. The W-band, class-AB PA achieves a saturated output power of 12.4 dBm and PAE of 14.2% from a 2-V supply. The performance demonstrates the high efficiency possible for mm-wave PAs in a SOI process.
Keywords :
CMOS integrated circuits; differential amplifiers; field effect MIMIC; millimetre wave power amplifiers; silicon-on-insulator; CMOS SOI; Q-band power amplifiers; Si; W-band power amplifiers; high-efficiency millimeter-wave power amplifiers; multistage class-AB designs; power-added efficiency; push-pull amplifier; saturated output power; silicon-on-insulator process; size 45 nm; voltage 2 V; Capacitance; Current measurement; Gain; Impedance matching; Logic gates; Power generation; Transmission line measurements; $Q$ -band; $W$
fLanguage :
English
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9480
Type :
jour
DOI :
10.1109/TMTT.2012.2193593
Filename :
6197245
Link To Document :
