A Low-Energy Room-Temperature Hydrogen Nanosensor: Utilizing the Schottky Barriers at the Electrode/Sensing-Material Interfaces

Author

Zhang, Peng ; Vincent, Abhilash ; Kumar, Amit ; Seal, Sudipta ; Cho, Hyoung Jin

Author_Institution

Dept. of Mech., Mater. & Aerosp. Eng., Univ. of Central Florida, Orlando, FL, USA

Volume

31

Issue

7

fYear

2010

fDate

7/1/2010 12:00:00 AM

Firstpage

770

Lastpage

772

Abstract

The hydrogen-sensing performance of a nanosensor integrating interdigitated electrodes with a gap of 100 nm and indium-oxide-doped tin dioxide nanoparticles is investigated at room temperature. The nonlinear behavior observed from the I/V curves of the sensor in air atmosphere indicated the presence of a Schottky barrier contact at the electrode/sensing-material interface. The linear I/V response obtained in hydrogen atmosphere suggested that the Schottky barrier height could be modulated in the presence of hydrogen. At a low applied voltage of 0.4 V and 0.09-vol% hydrogen gas exposure, a very large sensitivity of 2300 and a short response time of 127 s were recorded.

Keywords

Schottky barriers; gas sensors; indium compounds; nanosensors; tin compounds; Schottky barriers; electrode-sensing-material interfaces; hydrogen gas exposure; indium-oxide-doped tin dioxide nanoparticles; interdigitated electrodes; low-energy room-temperature hydrogen nanosensor; size 100 nm; $hbox{In}_{2}hbox{O}_{3}$-doped $hbox{SnO}_{2}$; Hydrogen sensor; Schottky barrier; interdigitated electrodes (IDEs);

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2010.2049473

Filename

5483081