Title :
300 GHz InP/GaAsSb/InP double HBTs with high current capability and BV/sub CEO/>6 V
Author :
Dvorak, M.W. ; Bolognesi, C.R. ; Pitts, O.J. ; Watkins, S.P.
Author_Institution :
Dept. of Phys., Simon Fraser Univ., Burnaby, BC, Canada
Abstract :
We report MOCVD-grown NpN InP/GaAsSb/InP abrupt double heterojunction bipolar transistors (DHBTs) with simultaneous values of f/sub T/ and f/sub MAX/ as high as 300 GHz for J/sub C/=410 kA/cm/sup 2/ at V/sub CE/=1.8 V. The devices maintain outstanding dynamic performances over a wide range of biases including the saturation mode. In this material system the p+ GaAsSb base conduction band edge lies 0.10-0.15 eV above the InP collector conduction band, thus favoring the use of nongraded base-collector designs without the current blocking effect found in conventional InP/GaInAs-based DHBTs. The 2000 /spl Aring/ InP collector provides good breakdown voltages of BV/sub CEO/=6 V and a small collector signal delay of /spl sim/0.23 ps. Thinner 1500 /spl Aring/ collectors allow operation at still higher currents with f/sub T/>200 GHz at J/sub C/=650 kA/cm/sup 2/.
Keywords :
III-V semiconductors; MOCVD coatings; gallium arsenide; heterojunction bipolar transistors; indium compounds; semiconductor device breakdown; 300 GHz; 6 V; InP-GaAsSb-InP; InP/GaAsSb/InP NpN abrupt double heterojunction bipolar transistor; MOCVD growth; breakdown voltage; collector signal delay; current capability; cutoff frequency; maximum operating frequency; nongraded base-collector design; saturation mode; Bipolar transistors; Conducting materials; Current density; Cutoff frequency; Delay; Doping; Double heterojunction bipolar transistors; Electrons; Heterojunction bipolar transistors; Indium phosphide;
Journal_Title :
Electron Device Letters, IEEE
