Ultra-short 25-nm-gate lattice-matched InAlAs/InGaAs HEMTs within the range of 400 GHz cutoff frequency

Author

Yamashita, Yoshimi ; Endoh, Akira ; Shinohara, Keisuke ; Higashiwaki, Masataka ; Hikosaka, Kohki ; Mimura, Takashi ; Hiyamizu, Satoshi ; Matsui, Toshiaki

Author_Institution

Fujitsu Labs. Ltd., Kanagawa, Japan

Volume

22

Issue

8

fYear

2001

Firstpage

367

Lastpage

369

Abstract

We have succeeded in fabricating ultra-short 25-nm-gate InAlAs/InGaAs high electron mobility transistors (HEMTs) lattice-matched to InP substrates. The two-step-recessed gate technology and low temperature processing at below 300/spl deg/C allowed the fabrication of such ultra-short gates. DC measurements showed that the 25-nm-gate HEMT had good pinchoff behavior. We obtained a cutoff frequency f/sub T/ of 396 GHz, within the range of 400 GHz f/sub T/, for the 25-nm-gate HEMT. This f/sub T/ is the highest value get reported for any type of transistor, and the gate length of 25 nm is the shortest value ever reported for any compound semiconductor transistor that exhibits device operation.

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; high electron mobility transistors; indium compounds; 25 nm; 300 C; 400 GHz; DC characteristics; InAlAs-InGaAs; InAlAs/InGaAs high electron mobility transistor; InP; InP substrate; compound semiconductor; cutoff frequency; fabrication; lattice matched growth; low temperature processing; pinchoff characteristics; two-step-recessed gate technology; ultra-short gate; Cutoff frequency; Fabrication; HEMTs; Indium compounds; Indium gallium arsenide; Indium phosphide; MODFETs; Radio frequency; Substrates; Temperature;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.936345

Filename

936345