Title :
RESURF AlGaN/GaN HEMT for high voltage power switching
Author :
Karmalkar, Shreepad ; Jianyu Deng ; Shur, Michael S.
Author_Institution :
Dept. of Electr. Eng., Indian Inst. of Technol., Madras, India
Abstract :
A novel HEMT configuration based on the RESURF technique is proposed for very high voltage power switching applications. It employs a p-n junction below the 2-DEG channel and two field plates, one extending from the gate and the other from the drain, to distribute the electric field over the gate to drain separation. 2-D simulations indicate a breakdown voltage >1 KV at on-resistance of /spl sim/1 m/spl Omega//spl middot/cm/sup 2/ (neglecting contact resistances) for the device.
Keywords :
III-V semiconductors; aluminium compounds; field effect transistor switches; gallium compounds; power HEMT; power semiconductor switches; semiconductor device breakdown; wide band gap semiconductors; 1 kV; 2D simulation; 2DEG channel; AlGaN-GaN; RESURF AlGaN/GaN HEMT; breakdown voltage; electric field distribution; field plate; high voltage power switching; on-resistance; p-n junction; Aluminum gallium nitride; Breakdown voltage; Doping; FETs; Gallium nitride; HEMTs; Heterojunctions; Insulation; P-n junctions; Physics;
Journal_Title :
Electron Device Letters, IEEE
