• DocumentCode
    1513659
  • Title

    High-frequency measurements of AlGaN/GaN HEMTs at high temperatures

  • Author

    Akita, M. ; Kishimoto, S. ; Mizutani, T.

  • Author_Institution
    Dept. of Quantum Eng., Nagoya Univ., Japan
  • Volume
    22
  • Issue
    8
  • fYear
    2001
  • Firstpage
    376
  • Lastpage
    377
  • Abstract
    High-frequency measurements of the 1.3-μm-long gate AlGaN-GaN HEMTs have been performed at temperatures ranging from 23 to 187/spl deg/C. The cutoff frequency fT decreased with increasing temperature. It was 13.7 and 8.7 GHz at 23 and 187/spl deg/C, respectively. The effective electron velocities /spl upsi//sub eff/ in the channel evaluated from the total delay time versus I/sub D/-inverse relation were 1.2 and 0.8×10/sup 7/ cm/s at 23 and 187/spl deg/C, respectively.
  • Keywords
    III-V semiconductors; aluminium compounds; gallium compounds; high-temperature electronics; microwave field effect transistors; microwave power transistors; power HEMT; semiconductor device measurement; wide band gap semiconductors; 1.3 micron; 23 to 187 C; 8.7 to 13.7 GHz; AlGaN-GaN; AlGaN/GaN HEMTs; HF measurements; cutoff frequency; effective electron velocities; high temperatures; high-frequency measurements; Aluminum gallium nitride; Cutoff frequency; Delay effects; Electrons; Gallium nitride; HEMTs; MODFETs; Performance evaluation; Temperature distribution; Temperature measurement;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/55.936348
  • Filename
    936348
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1513659