High quality thermal oxide on LPSOI formed by high temperature enhanced MILC

Author

Chan, Alain Chun-Keung ; Wang, Hongmei ; Chan, Mansun J.

Author_Institution

Dept. of Electr. & Electron. Eng., Hong Kong Univ. of Sci. & Technol., Kowloon, China

Volume

22

Issue

8

fYear

2001

Firstpage

384

Lastpage

386

Abstract

The characteristics of thermal polyoxide grown on large-grain polysilicon-on-insulator (LPSOI) formed by high temperature enhanced metal-induced-lateral-crystallization (MILC) have been investigated. Compared with conventional polysilicon films, LPSOI films have reduced surface roughness and a smaller number of grain boundaries. The improved polysilicon quality leads to better thermal oxide quality, especially at device dimensions that are smaller than the grain size. Intrinsic oxide characteristics such as breakdown voltage, leakage current and charge-to-breakdown value have been experimentally measured. Significant improvement in both oxide quality and device-to-device variation is reported.

Keywords

MOS capacitors; crystallisation; dielectric thin films; grain boundaries; grain size; leakage currents; semiconductor device breakdown; silicon-on-insulator; surface topography; LPSOI films; Si-SiO/sub 2/; breakdown voltage; charge-to-breakdown value; grain boundaries reduction; grain size; high quality thermal oxide; high temperature enhanced MILC; intrinsic oxide characteristics; large-grain polysilicon-on-insulator; leakage current; metal-induced-lateral-crystallization; polysilicon quality improvement; surface roughness reduction; thermal polyoxide; Dielectrics; Fabrication; Grain boundaries; Grain size; MOSFETs; Nickel; Rough surfaces; Silicon; Surface roughness; Temperature;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.936351

Filename

936351