Title :
High quality gate dielectrics grown by rapid thermal processing using split-N2O technique on strained-Si/sub 0.91/Ge/sub 0.09/ films
Author :
Bera, L.K. ; Choi, W.K. ; Tan, C.S. ; Samanta, S.K. ; Maiti, C.K.
Author_Institution :
Dept. of Electr. & Comput. Eng., Nat. Univ. of Singapore, Singapore
Abstract :
Thermal stability and strain relaxation temperature of strained Si/sub 0.91/Ge/sub 0.09/ layers has been investigated using double crystal x-ray diffraction (DCXRD). High quality gate oxynitride layers rapid thermally grown on strained Si/sub 0.91/Ge/sub 0.09/ using N/sub 2/O and the split N/sub 2/O cycle technique below the strained relaxed temperature is reported. A positive fixed oxide charge density was observed for N/sub 2/O and split-N/sub 2/O grown films. The O/sub 2/ grown films exhibit a negative fixed oxide charge. The excellent improvements in the leakage current, breakdown field and charge-to-breakdown value of the N/sub 2/O or split-N/sub 2/O grown films were achieved compared to pure O/sub 2/ grown films.
Keywords :
Ge-Si alloys; MOS capacitors; X-ray diffraction; dielectric thin films; electric breakdown; interface states; leakage currents; oxidation; rapid thermal processing; semiconductor materials; stress relaxation; thermal stability; MOS capacitors; N/sub 2/O; Si/sub 0.91/Ge/sub 0.09/; Si/sub 0.91/Ge/sub 0.09/-SiON; breakdown field; charge-to-breakdown value; double crystal x-ray diffraction; gate dielectric growth; gate oxide integrity; high quality gate oxynitride layers; leakage current; oxide reliability; positive fixed oxide charge density; rapid thermal processing; split-N/sub 2/O technique; strain relaxation temperature; strained Si/sub 0.91/Ge/sub 0.09/ layers; thermal stability; Capacitive sensors; Dielectrics; Electric breakdown; Germanium silicon alloys; MOSFET circuits; Oxidation; Plasma temperature; Rapid thermal processing; Silicon germanium; X-ray diffraction;
Journal_Title :
Electron Device Letters, IEEE
