DocumentCode
1513752
Title
A V-Band CMOS Direct Injection-Locked Frequency Divider Using Forward Body Bias Technology
Author
Chen, Y.-T. ; Li, M.-W. ; Huang, T.-H. ; Chuang, Huey-Ru
Author_Institution
Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan
Volume
20
Issue
7
fYear
2010
fDate
7/1/2010 12:00:00 AM
Firstpage
396
Lastpage
398
Abstract
This letter presents a V-band direct injection-locked frequency divider (ILFD) using forward body bias technology. The divider is implemented in a 0.13 μm CMOS process. The measurements show that the free-running frequency of the divider is 28.67 GHz, the total locking range is 16.2% at 58 GHz with 3.93 mW from a low supply voltage of 0.7 V, and the measured phase noise of the divider is -123.5 dBc/Hz at 500 KHz offset. The output power of the divider is higher than -9 dBm from 54 to 61 GHz, and a good figure of merit is achieved.
Keywords
CMOS integrated circuits; frequency dividers; CMOS process; V-Band CMOS direct injection-locked frequency divider; forward body bias technology; free-running frequency; frequency 28.67 GHz; frequency 500 kHz; frequency 58 GHz; power 3.93 mW; size 0.13 mum; voltage 0.7 V; CMOS; V-band; forward body-biasing; injection-locked frequency divider (ILFD); low supply voltage; phase-locked loop (PLL);
fLanguage
English
Journal_Title
Microwave and Wireless Components Letters, IEEE
Publisher
ieee
ISSN
1531-1309
Type
jour
DOI
10.1109/LMWC.2010.2049436
Filename
5483150
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