Title :
A V-Band CMOS Direct Injection-Locked Frequency Divider Using Forward Body Bias Technology
Author :
Chen, Y.-T. ; Li, M.-W. ; Huang, T.-H. ; Chuang, Huey-Ru
Author_Institution :
Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan
fDate :
7/1/2010 12:00:00 AM
Abstract :
This letter presents a V-band direct injection-locked frequency divider (ILFD) using forward body bias technology. The divider is implemented in a 0.13 μm CMOS process. The measurements show that the free-running frequency of the divider is 28.67 GHz, the total locking range is 16.2% at 58 GHz with 3.93 mW from a low supply voltage of 0.7 V, and the measured phase noise of the divider is -123.5 dBc/Hz at 500 KHz offset. The output power of the divider is higher than -9 dBm from 54 to 61 GHz, and a good figure of merit is achieved.
Keywords :
CMOS integrated circuits; frequency dividers; CMOS process; V-Band CMOS direct injection-locked frequency divider; forward body bias technology; free-running frequency; frequency 28.67 GHz; frequency 500 kHz; frequency 58 GHz; power 3.93 mW; size 0.13 mum; voltage 0.7 V; CMOS; V-band; forward body-biasing; injection-locked frequency divider (ILFD); low supply voltage; phase-locked loop (PLL);
Journal_Title :
Microwave and Wireless Components Letters, IEEE
DOI :
10.1109/LMWC.2010.2049436
