DocumentCode
1513823
Title
A function-fit model for the soft breakdown failure mode
Author
Miranda, Enrique ; Suñé, Jordi ; Rodríguez, Rosana ; Nafría, Montserrat ; Aymerich, Xavier
Author_Institution
Dept. d´´Eng. Electron., Univ. Autonoma de Barcelona, Spain
Volume
20
Issue
6
fYear
1999
fDate
6/1/1999 12:00:00 AM
Firstpage
265
Lastpage
267
Abstract
An empirical one parameter-based power law model for the leakage current through one or more soft breakdown spots in ultrathin (<5 nm) gate oxides is presented. Good fit to data can be obtained in nearly five decades of current from 0.5 to 5 V. In addition, it is shown that there exists a slight correlation between the parameters which describe the soft breakdown conduction characteristic and the stressing condition which triggers it.
Keywords
MIS devices; dielectric thin films; failure analysis; semiconductor device breakdown; semiconductor device models; semiconductor device reliability; MOS devices; breakdown conduction characteristic; function-fit model; one parameter-based power law model; soft breakdown failure mode; soft breakdown spots; stressing condition; ultrathin gate oxides; Breakdown voltage; Capacitors; Dielectric breakdown; Electric breakdown; Fabrication; Lead compounds; Leakage current; MOS devices; Tunneling; Ultra large scale integration;
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/55.767093
Filename
767093
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