DocumentCode
1513850
Title
Anomalous effect of trench-oxide depth on alpha-particle-induced charge collection
Author
Shin, Hyungsoon ; Kim, Nak-Myeong
Author_Institution
Dept. of Electron. Eng., Ewha Woman´´s Univ., Seoul, South Korea
Volume
20
Issue
6
fYear
1999
fDate
6/1/1999 12:00:00 AM
Firstpage
280
Lastpage
282
Abstract
The effect of trench-oxide depth on the alpha-particle-induced charge collection is analyzed for the first time. From the simulation results, it was found that the depth of trench oxide has a considerable influence on the amount of collected charge. The confining of generated charge by the trench oxide was identified as a cause of this anomalous effect. Therefore, the tradeoff between soft error rate and cell to cell isolation characteristics should be considered in optimizing the depth of trench oxide.
Keywords
DRAM chips; alpha-particle effects; isolation technology; DRAM memory cell; alpha particle irradiation; charge collection; isolation; simulation; soft error rate; trench oxide depth; Alpha particles; CMOS technology; Doping; Error analysis; Power supplies; Radiation effects; Random access memory; Scalability; Spontaneous emission; Voltage;
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/55.767098
Filename
767098
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