Title :
Anomalous effect of trench-oxide depth on alpha-particle-induced charge collection
Author :
Shin, Hyungsoon ; Kim, Nak-Myeong
Author_Institution :
Dept. of Electron. Eng., Ewha Woman´´s Univ., Seoul, South Korea
fDate :
6/1/1999 12:00:00 AM
Abstract :
The effect of trench-oxide depth on the alpha-particle-induced charge collection is analyzed for the first time. From the simulation results, it was found that the depth of trench oxide has a considerable influence on the amount of collected charge. The confining of generated charge by the trench oxide was identified as a cause of this anomalous effect. Therefore, the tradeoff between soft error rate and cell to cell isolation characteristics should be considered in optimizing the depth of trench oxide.
Keywords :
DRAM chips; alpha-particle effects; isolation technology; DRAM memory cell; alpha particle irradiation; charge collection; isolation; simulation; soft error rate; trench oxide depth; Alpha particles; CMOS technology; Doping; Error analysis; Power supplies; Radiation effects; Random access memory; Scalability; Spontaneous emission; Voltage;
Journal_Title :
Electron Device Letters, IEEE
