• DocumentCode
    1513850
  • Title

    Anomalous effect of trench-oxide depth on alpha-particle-induced charge collection

  • Author

    Shin, Hyungsoon ; Kim, Nak-Myeong

  • Author_Institution
    Dept. of Electron. Eng., Ewha Woman´´s Univ., Seoul, South Korea
  • Volume
    20
  • Issue
    6
  • fYear
    1999
  • fDate
    6/1/1999 12:00:00 AM
  • Firstpage
    280
  • Lastpage
    282
  • Abstract
    The effect of trench-oxide depth on the alpha-particle-induced charge collection is analyzed for the first time. From the simulation results, it was found that the depth of trench oxide has a considerable influence on the amount of collected charge. The confining of generated charge by the trench oxide was identified as a cause of this anomalous effect. Therefore, the tradeoff between soft error rate and cell to cell isolation characteristics should be considered in optimizing the depth of trench oxide.
  • Keywords
    DRAM chips; alpha-particle effects; isolation technology; DRAM memory cell; alpha particle irradiation; charge collection; isolation; simulation; soft error rate; trench oxide depth; Alpha particles; CMOS technology; Doping; Error analysis; Power supplies; Radiation effects; Random access memory; Scalability; Spontaneous emission; Voltage;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/55.767098
  • Filename
    767098