Fast organic thin-film transistor circuits

Author

Klauk, H. ; Gundlach, D.J. ; Jackson, T.N.

Author_Institution

Dept. of Electr. Eng., Pennsylvania State Univ., University Park, PA, USA

Volume

20

Issue

6

fYear

1999

fDate

6/1/1999 12:00:00 AM

Firstpage

289

Lastpage

291

Abstract

We have fabricated organic thin-film transistors and integrated circuits using pentacene as the active material. Devices were fabricated on glass substrates using low-temperature ion-beam sputtered silicon dioxide as the gate dielectric and a double-layer photoresist process to isolate devices. These transistors have carrier mobility near 0.5 cm²/V-s and on/off current ratio larger than 10/sup 7/. Using a level-shifting design that allows circuits to operate over a wide range of threshold voltages, we have fabricated ring oscillators with propagation delay below 75 μs per stage, limited by the level-shifting circuitry. When driven directly, inverters without level shifting show submicrosecond rise and fall time constants.

Keywords

carrier mobility; field effect integrated circuits; high-speed integrated circuits; organic semiconductors; thin film transistors; 75 mus; carrier mobility; device isolation; double-layer photoresist process; glass substrate; high-speed integrated circuit; inverter; ion beam sputtered silicon dioxide gate dielectric; level-shifting circuitry; on/off current ratio; organic thin film transistor; pentacene; propagation delay; ring oscillator; threshold voltage; Circuits; Dielectric devices; Dielectric materials; Dielectric substrates; Glass; Organic materials; Organic thin film transistors; Pentacene; Silicon compounds; Thin film transistors;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.767101

Filename

767101