DocumentCode
1513922
Title
Torsional Piezoresistive Effect in Polysilicon
Author
Larsen, Gerrit ; Howell, Larry L. ; Jensen, Brian D.
Author_Institution
Dept. of Mech. Eng., Brigham Young Univ., Provo, UT, USA
Volume
10
Issue
10
fYear
2010
Firstpage
1566
Lastpage
1570
Abstract
This paper presents a microelectromechanical test device and calibration method for finding torsional piezoresistive coefficients for micro sensing applications. The test device consists of a slider-crank connected to two torsional legs. The slider-crank creates torsional stress in the legs which causes a change in the electrical resistance through the legs. A model that predicts the effects of a scissor hinge on the slider-crank is presented. Torsional stresses in the legs are calculated and the legs are discretized into long parallel resistors and the stresses applied to each resistor. Assuming a second-order piezoresistance, an optimization is then done to find the piezoresistive coefficients by changing them until the model prediction fits the test data. These coefficients can be used to predict angular displacement from resistance measurements in fully integrated torsional sensors.
Keywords
calibration; electric resistance measurement; elemental semiconductors; microsensors; piezoresistive devices; silicon; test equipment; torsion; Si; angular displacement; calibration method; electrical resistance; microelectromechanical test device; microsensing application; parallel resistors; polysilicon; resistance measurement; scissor hinge; second-order piezoresistance; slider-crank; torsional piezoresistive effect; torsional sensor; torsional stress; Material properties; membrane analogy; piezoresistance; polysilicon; torsion;
fLanguage
English
Journal_Title
Sensors Journal, IEEE
Publisher
ieee
ISSN
1530-437X
Type
jour
DOI
10.1109/JSEN.2010.2046405
Filename
5483182
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