Title :
Input and reverse transfer capacitance measurement of MOS-gated power transistors under high current flow
Author_Institution :
Infineon Technol. AG, Munich, Germany
Abstract :
The measurement principle of the input and reverse transfer capacitance is shown. Function, stability, and operation of the measurement circuits are discussed. The on-state capacitances of a power DMOS transistor were measured under high current conditions of up to 250 A. A strong nonlinear characteristic is observed.
Keywords :
capacitance measurement; power MOSFET; stability; 250 A; MOS-gated power transistors; high current conditions; high current flow; input transfer capacitance measurement; measurement circuits; measurement principle; nonlinear characteristic; on-state capacitances; power DMOS transistor; reverse transfer capacitance measuremen; stability; Capacitance measurement; Circuits; Current measurement; Electrical resistance measurement; Fluid flow measurement; Heat sinks; Power measurement; Power transistors; Time measurement; Voltage;
Journal_Title :
Industry Applications, IEEE Transactions on
