• DocumentCode
    1513959
  • Title

    Input and reverse transfer capacitance measurement of MOS-gated power transistors under high current flow

  • Author

    Deml, C.

  • Author_Institution
    Infineon Technol. AG, Munich, Germany
  • Volume
    37
  • Issue
    4
  • fYear
    2001
  • Firstpage
    1062
  • Lastpage
    1066
  • Abstract
    The measurement principle of the input and reverse transfer capacitance is shown. Function, stability, and operation of the measurement circuits are discussed. The on-state capacitances of a power DMOS transistor were measured under high current conditions of up to 250 A. A strong nonlinear characteristic is observed.
  • Keywords
    capacitance measurement; power MOSFET; stability; 250 A; MOS-gated power transistors; high current conditions; high current flow; input transfer capacitance measurement; measurement circuits; measurement principle; nonlinear characteristic; on-state capacitances; power DMOS transistor; reverse transfer capacitance measuremen; stability; Capacitance measurement; Circuits; Current measurement; Electrical resistance measurement; Fluid flow measurement; Heat sinks; Power measurement; Power transistors; Time measurement; Voltage;
  • fLanguage
    English
  • Journal_Title
    Industry Applications, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0093-9994
  • Type

    jour

  • DOI
    10.1109/28.936397
  • Filename
    936397
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1513959