DocumentCode :
1513967
Title :
A microstructure for in situ determination of residual strain
Author :
Pan, Chi Shiang ; Hsu, Wensyang
Author_Institution :
Dept. of Mech. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan
Volume :
8
Issue :
2
fYear :
1999
fDate :
6/1/1999 12:00:00 AM
Firstpage :
200
Lastpage :
207
Abstract :
This work presents a new strain sensor with a compact structure. The strain sensor comprises of a pair of cantilever beams with different lengths connected by a short tip. The residual strain causes two beams to deflect each other, thereby magnifying the deflection, which is measured by the tip. The displacement is independent of both Young´s modulus and the film´s thickness. An analytical model is derived to relate the measured displacement to residual strain. Finite-element modeling is also used to analyze the model. This work also thoroughly considers other factors that influence the designs and the implicit limitations of the strain sensors. Experimental results with an SiO2 film as well as undoped LPCVD polysilicon films are used to demonstrate the effectiveness of the proposed structure
Keywords :
finite element analysis; microsensors; strain sensors; thin films; LPCVD polysilicon film; Si; SiO2; SiO2 film; analytical model; cantilever beam; finite element model; in situ measurement; microstructure; residual strain; strain sensor; Analytical models; Capacitive sensors; Displacement measurement; Microstructure; Residual stresses; Sensor phenomena and characterization; Strain measurement; Stress measurement; Structural beams; Testing;
fLanguage :
English
Journal_Title :
Microelectromechanical Systems, Journal of
Publisher :
ieee
ISSN :
1057-7157
Type :
jour
DOI :
10.1109/84.767116
Filename :
767116
Link To Document :
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