Title :
Characterization of contact electromechanics through capacitance-voltage measurements and simulations
Author :
Chan, Edward K. ; Garikipati, Krishna ; Dutton, Robert W.
Author_Institution :
Center for Integrated Syst., Stanford Univ., CA, USA
fDate :
6/1/1999 12:00:00 AM
Abstract :
Electrostatically actuated polysilicon beams fabricated in the multiuser MEMS process (MUMPs) are studied, with an emphasis on the behavior when the beam is in contact with an underlying silicon nitride dielectric layer. Detailed two-dimensional (2-D) electromechanical simulations, including the mechanical effects of stepups, stress-stiffening and contact, as well as the electrical effects of fringing fields and finite beam thickness, are performed. Comparisons are made to quasi-2-D and three-dimensional simulations. Pull-in voltage and capacitance-voltage measurements together with 2-D simulations are used to extract material properties. The electromechanical system is used to monitor charge buildup in the nitride which is modeled by a charge trapping model. Surface effects are included in the simulation using a compressible-contact-surface model. Monte Carlo simulations reveal the limits of simulation accuracy due to the limited resolution of input parameters
Keywords :
Monte Carlo methods; electrical contacts; electrostatic actuators; MUMPs; Monte Carlo simulation; Si-Si3N4; capacitance-voltage characteristics; charge trapping model; compressible-contact-surface model; contact electromechanics; electrostatic actuator; multiuser MEMS process; polysilicon beam; pull-in voltage; silicon nitride dielectric layer; two-dimensional simulation; Capacitance measurement; Capacitance-voltage characteristics; Contacts; Dielectric measurements; Electromechanical systems; Material properties; Micromechanical devices; Silicon; Two dimensional displays; Voltage measurement;
Journal_Title :
Microelectromechanical Systems, Journal of