Title :
Simulation of the electrical characteristics of high-voltage mesa and planar GaN Schottky and p-i-n rectifiers
Author :
Shelton, Bryan S. ; Zhu, Ting Gang ; Lambert, Damien J H ; Dupuis, Russell D.
Author_Institution :
Microelectron. Res. Center, Texas Univ., Austin, TX, USA
fDate :
8/1/2001 12:00:00 AM
Abstract :
The use of GaN for the fabrication of Schottky and p-i-n rectifiers presents an opportunity to take advantage of the high-voltage and high-power handling characteristics of the III-nitride materials. We report the results of two-dimensional (2-D) device simulations to provide estimates of the performance limitations and a comparison for vertical- and horizontal-geometry GaN mesa and planar Schottky-barrier rectifiers and p-i-n devices. The simulated performance of devices with practical drift region thicknesses indicate that it is possible to realize Schottky-barrier and p-i-n rectifiers with turn-on voltages of V 0N<5 V, and blocking voltages of up to VBR=-2,320 V and -675 V, and figure of merit values of VBR2/R0N>1000 and 3000 MW/cm2 , respectively
Keywords :
III-V semiconductors; Schottky diodes; gallium compounds; p-i-n diodes; power semiconductor diodes; semiconductor device breakdown; semiconductor device models; solid-state rectifiers; -2320 V; -675 V; 1.5 to 2.3 kV; 2-D device simulations; 5 V; GaN; GaN Schottky rectifiers; GaN p-i-n rectifiers; blocking voltage; breakdown voltage; drift region thickness; electrical characteristics; figure of merit; high-voltage mesa rectifiers; high-voltage planar rectifiers; horizontal geometry; performance limitations; turn-on voltage; vertical geometry; Electric variables; Gallium nitride; P-i-n diodes; PIN photodiodes; Rectifiers; Schottky diodes; Silicon carbide; Thyristors; Two dimensional displays; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
