DocumentCode :
15141
Title :
Undershoot suppression technique for fully integrated pulse-width modulated switching converters
Author :
Cheng Huang ; Mok, Philip K. T.
Author_Institution :
Dept. of Electron. & Comput. Eng., Hong Kong Univ. of Sci. & Technol., Hong Kong, China
Volume :
51
Issue :
1
fYear :
2015
fDate :
1 8 2015
Firstpage :
96
Lastpage :
97
Abstract :
A shunt-regulation control technique is presented to improve the load transient performance of fully integrated high-frequency converters. The undershoot voltage, which used to be limited by the system loop response and the nanofarad range small on-chip capacitor, is significantly suppressed. The proposed converter is simulated by a standard 0.13 μm CMOS process using a 6 nH inductor and 10 nF capacitor under different process corners with parasitics extracted from the layout of critical blocks. Compared to a conventional converter with the bandwidth pushed to the limit, the undershoot voltage is reduced from 360 to 100 mV with a transient step of 150-550 mA in 100 ps.
Keywords :
CMOS integrated circuits; DC-DC power convertors; PWM power convertors; switching convertors; voltage control; CMOS process; capacitance 10 nF; current 150 mA to 550 mA; fully integrated DC-DC converters; fully integrated high-frequency converters; fully integrated pulse-width modulated switching converters; load transient performance; nanofarad range small on-chip capacitor; process corners; shunt-regulation control technique; size 0.13 mum; system loop response; time 100 ps; undershoot suppression technique; undershoot voltage suppression;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el.2014.2171
Filename :
7006853
Link To Document :
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