On the InGaP/GaAs/InGaAs camel-like FET for high-breakdown, low-leakage, and high-temperature operations

Author

Liu, Wen-Chau ; Yu, Kuo-Hui ; Lin, Kun-Wei ; Tsai, Jung-Hui ; Wu, Cheng-Zu ; Lin, Kuan-Po ; Yen, Chih-Hung

Author_Institution

Dept. of Electr. Eng., Cheng Kung Univ., Tainan, Taiwan

Volume

48

Issue

8

fYear

2001

fDate

8/1/2001 12:00:00 AM

Firstpage

1522

Lastpage

1530

Abstract

A new field-effect transistor using a high-barrier n⁺ -GaAs/p⁺-InGaP/n-GaAs camel-like gate and GaAs/InGaAs heterostructure-channel has been fabricated successfully and demonstrated. Experimentally, an ultra high gate-drain breakdown voltage of 52 V, a high drain-source operation voltage over 20 V with low leakage currents, and a high drain-source off-state breakdown voltage of 39.7 V are obtained for a 1×100 μm² device. The high breakdown behavior is attributed to the use of high barrier camel-like gate and heterostructure channels to reduce the undesired leakage current. Furthermore, the studied device also shows high breakdown behavior in a high temperature environment and good microwave characteristics. Therefore, based on these characteristics, the studied device is suitable for high-breakdown, low-leakage, and high-temperature applications

Keywords

III-V semiconductors; gallium arsenide; gallium compounds; high-temperature electronics; indium compounds; leakage currents; microwave field effect transistors; microwave power transistors; power field effect transistors; semiconductor device breakdown; 20 V; 39.7 V; 52 V; GaAs/InGaAs heterostructure-channel; InGaP-GaAs-InGaAs; InGaP/GaAs/InGaAs camel-like FET; field-effect transistor; high drain-source off-state breakdown voltage; high drain-source operation voltage; high temperature environment; high-barrier n⁺ -GaAs/p⁺-InGaP/n-GaAs camel-like gate; high-breakdown operation; high-temperature operation; low leakage currents; low-leakage operation; microwave characteristics; ultra high gate-drain breakdown voltage; Carrier confinement; Electric breakdown; FETs; Gallium arsenide; HEMTs; Indium gallium arsenide; Leakage current; MESFETs; MODFETs; Temperature;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.936502

Filename

936502