Highly reliable ultrathin silicon oxide film formation at low temperature by oxygen radical generated in high-density krypton plasma

Author

Sekine, Katsuyuki ; Saito, Yuji ; Hirayama, Masaki ; Ohmi, Tadahiro

Volume

48

Issue

8

fYear

2001

fDate

8/1/2001 12:00:00 AM

Firstpage

1550

Lastpage

1555

Abstract

This paper focuses attention on electrical properties of silicon oxide films grown by oxygen radical generated in Kr/O₂ mixed high-density microwave-excited plasma at 400°C. They represent high growth rate, low activation energy, high dielectric strength, high charge-to-breakdown, and low interface trap density and bulk charge enough to replace thermally grown silicon oxide

Keywords

MOS capacitors; MOSFET; dielectric thin films; electric breakdown; electric strength; interface states; oxidation; plasma materials processing; semiconductor device reliability; silicon compounds; 400 C; Kr-O₂; Kr/O₂ mixed high-density microwave-excited plasma; MOS capacitors; MOSFET; Si; Si-SiO₂; bulk charge; electrical properties; high charge-to-breakdown; high dielectric strength; high growth rate; high-density krypton plasma; low activation energy; low interface trap density; low temperature formation; oxygen radical; reliable ultrathin SiO_x film; Manufacturing processes; Microwave generation; Oxidation; Oxygen; Plasma density; Plasma properties; Plasma temperature; Semiconductor films; Silicon; Substrates;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.936559

Filename

936559