• DocumentCode
    1514138
  • Title

    Hydrogenated amorphous silicon-germanium PIN X-ray detector

  • Author

    Liu, Sheng-Da ; Lee, Si-Chen ; Chern, Ming-Yau

  • Author_Institution
    Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan
  • Volume
    48
  • Issue
    8
  • fYear
    2001
  • fDate
    8/1/2001 12:00:00 AM
  • Firstpage
    1564
  • Lastpage
    1567
  • Abstract
    The hydrogenated amorphous silicon-germanium (a-Si1-xGe x:H) pin X-ray detector has been fabricated successfully. It is found by introducing germanium into the amorphous silicon film, the X-ray detection efficiency is almost twice improved. This is due to the fact that the energy gap of a-Si1-xGex:H is smaller than that of a-Si:H
  • Keywords
    Ge-Si alloys; X-ray detection; amorphous semiconductors; energy gap; hydrogen; p-i-n photodiodes; semiconductor counters; Si0.44Ge0.56:H; X-ray detection efficiency; a-Si1-xGex:H pin X-ray detector; energy gap; hydrogenated amorphous silicon-germanium; plasma enhanced CVD; Alloying; Amorphous materials; Amorphous silicon; Germanium silicon alloys; Image edge detection; Optical films; Photovoltaic cells; Silicon germanium; Stimulated emission; X-ray detectors;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/16.936561
  • Filename
    936561
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1514138