The low-high-low I-V characteristics of five to seven peaks based on four NDR devices

Author

Gan, Kwang-Jow

Author_Institution

Dept. of Electron. Eng., Kun Shan Univ. of Technol., Tainan, Taiwan

Volume

48

Issue

8

fYear

2001

fDate

8/1/2001 12:00:00 AM

Firstpage

1683

Lastpage

1687

Abstract

Some novel five-peak, six-peak, and seven-peak current-voltage (I-V) characteristics of four series-connected negative differential resistance (NDR) devices are investigated and demonstrated in this paper. Especially, the peak currents of these novel I-V characteristics are presented as a low-high-low situation. However, the magnitude of each peak current is almost the same or from low to high values gradually in traditional structure that connects identical devices in series. The results of this paper can provide some ideas for integrated circuits based on NDR devices

Keywords

active networks; monolithic integrated circuits; negative resistance circuits; nonlinear network analysis; MVL circuits; integrated circuits; low-high-low I-V characteristics; multi-valued logic circuits; multiple peak I-V curves; negative differential resistance devices; peak currents; series-connected NDR devices; Application specific integrated circuits; Circuit analysis; Circuit synthesis; Complexity theory; Forward contracts; Gallium arsenide; Gallium nitride; Large scale integration; Piecewise linear techniques; Resistors;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.936592

Filename

936592