DocumentCode
1514299
Title
Interpretation of the common-emitter offset voltage in heterojunction bipolar transistors
Author
McAlister, S.P. ; McKinnon, W.R. ; Driad, Rachid
Author_Institution
Inst. for Microstructural Sci., Nat. Res. Council of Canada, Ottawa, Ont., Canada
Volume
48
Issue
8
fYear
2001
fDate
8/1/2001 12:00:00 AM
Firstpage
1745
Lastpage
1747
Abstract
The offset voltage in heterojunction bipolar transistors (HBTs) can be read graphically from a plot combining the forward Gummel and reverse Gummel plots. We use a Gummel-Poon model to show when this graphical construction works, and illustrate the method with measurements for InP/InGaAs double HBTs
Keywords
III-V semiconductors; gallium arsenide; graphs; heterojunction bipolar transistors; indium compounds; semiconductor device measurement; semiconductor device models; Gummel-Poon model; InP-InGaAs; common-emitter offset voltage; double HBTs; figure of merit; forward Gummel plot; graphical construction; heterojunction bipolar transistors; parameter estimation; reverse Gummel plot; Bipolar transistors; Circuits; Energy consumption; Heterojunction bipolar transistors; Indium gallium arsenide; Indium phosphide; Parameter estimation; Roentgenium; Semiconductor device measurement; Voltage;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/16.936699
Filename
936699
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