Title :
Interpretation of the common-emitter offset voltage in heterojunction bipolar transistors
Author :
McAlister, S.P. ; McKinnon, W.R. ; Driad, Rachid
Author_Institution :
Inst. for Microstructural Sci., Nat. Res. Council of Canada, Ottawa, Ont., Canada
fDate :
8/1/2001 12:00:00 AM
Abstract :
The offset voltage in heterojunction bipolar transistors (HBTs) can be read graphically from a plot combining the forward Gummel and reverse Gummel plots. We use a Gummel-Poon model to show when this graphical construction works, and illustrate the method with measurements for InP/InGaAs double HBTs
Keywords :
III-V semiconductors; gallium arsenide; graphs; heterojunction bipolar transistors; indium compounds; semiconductor device measurement; semiconductor device models; Gummel-Poon model; InP-InGaAs; common-emitter offset voltage; double HBTs; figure of merit; forward Gummel plot; graphical construction; heterojunction bipolar transistors; parameter estimation; reverse Gummel plot; Bipolar transistors; Circuits; Energy consumption; Heterojunction bipolar transistors; Indium gallium arsenide; Indium phosphide; Parameter estimation; Roentgenium; Semiconductor device measurement; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
