Title :
Improved microwave and noise performances of InGaP/In0.33Ga0.67As p-HEMT grown on patterned GaAs substrate
Author :
Kim, J.H. ; Jo, S.J. ; Song, J.I.
Author_Institution :
Dept. of Inf. & Commun., Kwangju Inst. of Sci. & Technol., South Korea
fDate :
7/19/2001 12:00:00 AM
Abstract :
Microwave and noise performances of a highly strained InGaP/In0.33Ga0.67As pseudomorphic high electron mobility transistor (p-HEMT) grown on a patterned GaAs substrate and a conventional InGaP/In0.22Ga0.78As p-HEMT grown on a non-patterned GaAs substrate were compared. The highly strained InGaP/In0.33Ga0.67As p-HEMT grown on the patterned GaAs substrates showed substantial improvements in DC (drain saturation current and transconductance), microwave (fT and fmax ), and low-frequency and high-frequency noise performances compared with those of the conventional InGaP/In0.22Ga0.78As p-HEMT grown on the non-patterned GaAs substrate
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; high electron mobility transistors; indium compounds; microwave field effect transistors; semiconductor device noise; InGaP-In0.33Ga0.67As; drain saturation current; high-frequency noise performance; microwave performance; noise performance; p-HEMT; pseudomorphic high electron mobility transistor; transconductance;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20010636
