Title :
Bidirectional Multimode Fiber Interconnection at Gb/s Data Rates With Monolithically Integrated VCSEL–PIN Transceiver Chips
Author :
Kern, Alexander ; Paul, Sujoy ; Schwarz, Wolfgang ; Wahl, Dietmar ; Blood, Rainer ; Michalzik, Rainer
Author_Institution :
Inst. of Optoelectron., Ulm Univ., Ulm, Germany
Abstract :
We present the monolithic design, fabrication, and properties of 850-nm wavelength AlGaAs-GaAs-based transceiver chips for low-cost bidirectional optical data transmission over a butt-coupled standard multimode fiber of a few hundred meter length. The chips with a stacked layer structure of a vertical-cavity surface-emitting laser (VCSEL) and a PIN (p-doped-intrinsic-n-doped) photodetector can well handle data rates of 9 Gb/s in back-to-back mode and 7 Gb/s over a 500-m-long 50-μm core diameter fiber.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; integrated optics; optical fibre couplers; optical transceivers; p-i-n photodiodes; photodetectors; surface emitting lasers; AlGaAs-GaAs; PIN photodetector; bidirectional multimode fiber interconnection; bidirectional optical data transmission; bit rate 7 Gbit/s; bit rate 9 Gbit/s; butt coupled standard multimode fiber; distance 500 m; monolithically integrated VCSEL-PIN transceiver chips; size 50 mum; stacked layer structure; vertical cavity surface emitting laser; wavelength 850 nm; Bandwidth; Data communication; Etching; Gallium arsenide; Optical attenuators; Transceivers; Vertical cavity surface emitting lasers; Bidirectional optical data transmission; PIN photodetector; monolithic integration; multimode fiber (MMF); transceiver (TRx); vertical-cavity surface-emitting laser (VCSEL);
Journal_Title :
Photonics Technology Letters, IEEE
DOI :
10.1109/LPT.2011.2153843
