Title :
Description of polarisation dependence of two-photon absorption in silicon avalanche photodiodes
Author :
O´Dowd, J. ; Guo, W.H. ; Lynch, M. ; Flood, E. ; Bradley, A. Louise ; Donegan, J.F.
Author_Institution :
Semicond. Photonics Group, Trinity Coll. Dublin, Dublin, Ireland
Abstract :
A simple formula is obtained that very accurately describes the level of two-photon absorption (TPA) generated by elliptically polarised light in silicon avalanche photodiodes (Si-APDs). The dichroism parameter necessary to describe the polarisation dependence of TPA in Si-APDs at room temperature is determined to be +0.372 in the region of 1550 nm.
Keywords :
absorption; avalanche photodiodes; elemental semiconductors; photon polarisation; silicon; Si; dichroism parameter; polarisation dependence; silicon avalanche photodiodes; two-photon absorption; wavelength 1550 nm;
Journal_Title :
Electronics Letters
DOI :
10.1049/el.2010.3090
