DocumentCode
1514840
Title
close to tiers
Author
Dyball, Helen
Author_Institution
IET, Stevenage, UK
Volume
48
Issue
10
fYear
2012
Firstpage
535
Lastpage
535
Abstract
A new class of RF switches have been developed by MIT Lincoln Laboratory in the US. The single chip high-performance vertically stacked switches are based on a wafer-scale 3D integration technology, and have a footprint that is much smaller than in conventional 2D switches. The approach, which is fully compatible with the standard Si CMOS process, could also be used for other types of circuit such as amplifiers, signal processors and imagers.
Keywords
CMOS integrated circuits; microwave switches; radiofrequency integrated circuits; silicon; three-dimensional integrated circuits; wafer-scale integration; CMOS process; MIT Lincoln laboratory; RF switches; Si; US; amplifiers; conventional 2D switch; imagers; signal processors; single chip high-performance vertical stacked switch; wafer-scale 3D integration technology;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el.2012.1448
Filename
6198503
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