DocumentCode
1514859
Title
Extraction of SOS MOSFET RF equivalent circuit elements by LCR meter measurements
Author
Bertling, K. ; Rakic, A.D. ; Yeow, Y.T. ; Brawley, A. ; Domyo, H. ; Rotella, F.M.
Author_Institution
Sch. of Inf. Technol. & Electr. Eng., Univ. of Queensland, Brisbane, QLD, Australia
Volume
46
Issue
12
fYear
2010
Firstpage
863
Lastpage
864
Abstract
Two methods for the extraction of the small-signal equivalent circuit of high frequency silicon on sapphire (SOS) MOSFETs are compared. One technique employs microwave vector network analyser measurements in the 0.2-24-GHz range, while the other uses a low frequency LCR meter at 100-kHz to determine the circuit element values. Results presented show excellent agreement between the two methods. It is concluded that the low frequency method can be successfully used to extract high frequency circuit-model elements and reasons for this are offered.
Keywords
MOSFET; equivalent circuits; network analysers; sapphire; silicon; LCR meter measurements; MOSFET; RF equivilent circuit elements; frequency 0.2 GHz to 24 GHz; frequency 100 kHz; high frequency circuit-model elements; microwave vector network analyser;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el.2010.0922
Filename
5483973
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