• DocumentCode
    1514942
  • Title

    2.6 μm GaSB based photonic crystal coupled cavity lasers

  • Author

    Moumdji, S. ; Larrue, A. ; Belharet, D. ; Dubreuil, P. ; Bonnefont, S. ; Gauthier-Lafaye, Olivier ; Rouillard, Y. ; Vicet, A.

  • Author_Institution
    CNRS, Univ. Montpellier 2, Montpellier, France
  • Volume
    45
  • Issue
    22
  • fYear
    2009
  • Firstpage
    1119
  • Lastpage
    1121
  • Abstract
    Long wavelength GaInAsSb/AlGaAsSb quantum wells lasers have been grown by molecular beam epitaxy and processed into ridge cavities coupled by an intracavity photonic crystal mirror, to enhance the laser spectral properties. The devices operate in the continuous-wave regime at room temperature with a single frequency emission at 2.6 m.
  • Keywords
    aluminium compounds; gallium compounds; laser cavity resonators; laser mirrors; molecular beam epitaxial growth; photonic crystals; quantum well lasers; GaInAsSb-AlGaAsSb; GaSb; continuous-wave regime; intracavity photonic crystal mirror; laser spectral properties; molecular beam epitaxy; photonic crystal coupled cavity lasers; quantum wells lasers; ridge cavities; single frequency emission; temperature 293 K to 298 K; wavelength 2.6 mum;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el.2009.2129
  • Filename
    5295338
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1514942