Title :
Analytical Approximation for the Surface Potential in n-Channel MOSFETs Considering Quantum–Mechanical Effects
Author :
Jayadeva, G.S. ; DasGupta, Amitava
Author_Institution :
Dept. of Electr. Eng., IIT Madras, Chennai, India
Abstract :
A physics-based analytical model for the surface potential in n-channel MOSFETs considering quantum-mechanical effects in the inversion region is presented. The model is continuous from the accumulation to strong inversion regions of operation. The results from the model show excellent agreement with the values obtained from a self-consistent solution of the Schrödinger and Poisson equations. The transconductance and current-voltage characteristics of MOSFETs obtained using the surface-potential values calculated from our model also agree very well with those obtained from numerical methods and reported data.
Keywords :
MOSFET; Poisson equation; Schrodinger equation; surface potential; Poisson equation; Schrodinger equation; analytical model; current-voltage characteristic; inversion region; nchannel MOSFET; quantum mechanical effects; surface potential values; transconductance characteristic; Analytical models; Helium; MOSFETs; Poisson equations; Potential well; Quantum mechanics; Semiconductor device doping; Semiconductor process modeling; Smoothing methods; Transconductance; Analytical model; nMOSFETs; quantum–mechanical (QM) effect; surface potential;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2010.2050959
