DocumentCode
1515556
Title
A simple diode model with reverse recovery
Author
Lauritzen, Peter O. ; Ma, Cliff L.
Author_Institution
Dept. of Electr. Eng., Washington Univ., Seattle, WA, USA
Volume
6
Issue
2
fYear
1991
fDate
4/1/1991 12:00:00 AM
Firstpage
188
Lastpage
191
Abstract
The basic diode charge-control model used in SPICE is extended to include reverse recovery. The model is derived from the semiconductor charge transport equations. The diode charge transport equations are simplified using the lumped charged concept of Linvill, and the model is demonstrated on the Saber simulator for simple inductive and resistive load circuits. The two model parameters, diode lifetime and diffusion transit time, can easily be determined from a switching waveform
Keywords
digital simulation; electronic engineering computing; semiconductor device models; semiconductor diodes; software packages; SPICE; Saber simulator; charge transport equations; diffusion transit time; diode charge-control model; inductive load; lifetime; lumped charged concept; resistive load; reverse recovery; semiconductor device models; software packages; Capacitance; Capacitors; Charge carrier processes; Circuit simulation; Energy storage; Helium; P-i-n diodes; Power dissipation; SPICE; Voltage;
fLanguage
English
Journal_Title
Power Electronics, IEEE Transactions on
Publisher
ieee
ISSN
0885-8993
Type
jour
DOI
10.1109/63.76804
Filename
76804
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