• DocumentCode
    1515556
  • Title

    A simple diode model with reverse recovery

  • Author

    Lauritzen, Peter O. ; Ma, Cliff L.

  • Author_Institution
    Dept. of Electr. Eng., Washington Univ., Seattle, WA, USA
  • Volume
    6
  • Issue
    2
  • fYear
    1991
  • fDate
    4/1/1991 12:00:00 AM
  • Firstpage
    188
  • Lastpage
    191
  • Abstract
    The basic diode charge-control model used in SPICE is extended to include reverse recovery. The model is derived from the semiconductor charge transport equations. The diode charge transport equations are simplified using the lumped charged concept of Linvill, and the model is demonstrated on the Saber simulator for simple inductive and resistive load circuits. The two model parameters, diode lifetime and diffusion transit time, can easily be determined from a switching waveform
  • Keywords
    digital simulation; electronic engineering computing; semiconductor device models; semiconductor diodes; software packages; SPICE; Saber simulator; charge transport equations; diffusion transit time; diode charge-control model; inductive load; lifetime; lumped charged concept; resistive load; reverse recovery; semiconductor device models; software packages; Capacitance; Capacitors; Charge carrier processes; Circuit simulation; Energy storage; Helium; P-i-n diodes; Power dissipation; SPICE; Voltage;
  • fLanguage
    English
  • Journal_Title
    Power Electronics, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0885-8993
  • Type

    jour

  • DOI
    10.1109/63.76804
  • Filename
    76804