DocumentCode :
1515585
Title :
Thermal parameter estimation using recursive identification
Author :
Skibinski, Gary L. ; Sethares, William A.
Author_Institution :
Wisconsin Univ., Madison, WI, USA
Volume :
6
Issue :
2
fYear :
1991
fDate :
4/1/1991 12:00:00 AM
Firstpage :
228
Lastpage :
239
Abstract :
A novel method that converts a semiconductor transient thermal impedance curve (TTIC) into an equivalent thermal RC network model is presented. Thermal resistance (R) and thermal capacitance (C) parameters of the model are identified using manufacturer´s data and offline recursive least square techniques. Relevant estimation theory concepts and the formulation of an appropriate model for the identification process are given. Model synthesis is illustrated using an isolated base power transistor module. The application of time decoupled theory for high order thermal models is outlined. Simulation of junction temperature responses using model and manufacturer TTICs are compared. Estimated parameter validity is further confirmed by parameter calculation obtained from module physical dimensions
Keywords :
parameter estimation; power transistors; semiconductor device models; thermal analysis; equivalent thermal RC network; isolated base power transistor; junction temperature responses; recursive identification; recursive least square techniques; semiconductor device models; thermal capacitance; thermal parameter estimation; thermal resistance; time decoupled theory; transient thermal impedance curve; Capacitance; Estimation theory; Impedance; Least squares methods; Parameter estimation; Power transistors; Semiconductor device manufacture; Temperature; Thermal resistance; Virtual manufacturing;
fLanguage :
English
Journal_Title :
Power Electronics, IEEE Transactions on
Publisher :
ieee
ISSN :
0885-8993
Type :
jour
DOI :
10.1109/63.76809
Filename :
76809
Link To Document :
بازگشت