Title :
A Detailed Study of the Forming Stage of an Electrochemical Resistive Switching Memory by KMC Simulation
Author :
Pan, Feng ; Yin, Shong ; Subramanian, Vivek
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Univ. of California-Berkeley, Berkeley, CA, USA
fDate :
7/1/2011 12:00:00 AM
Abstract :
The forming stage characteristics of electrochemical-metallization resistive-switching-random-access-memory cells are studied with an improved kinetic Monte Carlo simulator. The filament topographies obtained at different forming voltage levels and the relationship between forming time and filament topographies are investigated in detail. The so-called “voltage-time dilemma” is simulated and studied. In addition, the various chemical and physical processes that produce these results are discussed. Finally, the simulated pattern is compared with experiments conducted on Cu/H2O and Ag/Ag2S systems.
Keywords :
Monte Carlo methods; random-access storage; semiconductor device metallisation; KMC simulation; electrochemical-metallization resistive-switching-random-access-memory cell; filament topography; kinetic Monte Carlo simulator; time topography; voltage level; voltage-time dilemma; Anodes; Cathodes; Copper; Surface topography; Surface treatment; Switches; Electrochemical; filament; forming stage; kinetic Monte Carlo (KMC); resistive switching random access memory (RRAM);
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2011.2143691
