Effects of Thermal Annealing on the Dynamic Characteristics of InAs/GaAs Quantum Dot Lasers

Author

Zhao, H.X. ; Yoon, S.F. ; Ngo, C.Y. ; Wang, R. ; Tong, C.Z. ; Liu, C.Y. ; Cao, Q.

Author_Institution

Sch. of Electr. & Electron. Eng., Nanyang Technol. Univ., Singapore, Singapore

Volume

2

Issue

4

fYear

2010

Firstpage

630

Lastpage

635

Abstract

We investigated the effects of rapid thermal annealing (RTA) on the dynamic characteristics of the InAs/GaAs ten-layer quantum dot (QD) laser. Improvements in the temperature stability of bandwidth have been demonstrated upon annealing. We attribute the improvements to the following factors: 1) increase in internal quantum efficiency and 2) reduction in temperature dependency of differential gain. The increase in bandwidth at high temperature from the annealed QDs could be due to a reduction in the relaxation time on the order of 0.1 ps. More importantly, the RTA process resulted in better temperature stability in the differential gain and gain compression. This is beneficial for the development of uncooled high-speed QD lasers.

Keywords

III-V semiconductors; gallium arsenide; indium compounds; quantum dot lasers; rapid thermal annealing; InAs-GaAs; differential gain; gain compression; quantum dot lasers; rapid thermal annealing; temperature stability; uncooled high-speed QD lasers; Bandwidth; Gallium arsenide; Photonics; Quantum computing; Quantum dot lasers; Rapid thermal annealing; Semiconductor lasers; Stability; Temperature; Thermal engineering; Quantum dots (QD); semiconductor lasers;

fLanguage

English

Journal_Title

Photonics Journal, IEEE

Publisher

ieee

ISSN

1943-0655

Type

jour

DOI

10.1109/JPHOT.2010.2052843

Filename

5484599