2-D Simulator of Laser Crystallization for Polycrystalline-Silicon Thin-Film Transistors

A 2-D simulator of laser crystallization is proposed as a practical evaluation tool for polycrystalline-silicon thin-film transistors. Random nucleation, crystal growth velocity, latent heat emission, and partial crystallization are modeled to simulate crystallization processes from supercooling phases. Grain sizes are reproduced as a function of substrate temperature during laser crystallization. It is found that the grain size increases as the substrate temperature rises because of the suppression of the nucleation.