Title :
Device Characteristics of InGaSb/AlSb High-Hole-Mobility FETs
Author :
Ho, Han-Chieh ; Gao, Zon-Yan ; Lin, Heng-Kuang ; Chiu, Pei-Chin ; Hsin, Yue-Ming ; Chyi, Jen-Inn
Author_Institution :
Dept. of Electr. Eng., Nat. Central Univ., Chungli, Taiwan
fDate :
7/1/2012 12:00:00 AM
Abstract :
This letter reports the effect of growth temperature on carrier transport characteristics in In0.4Ga0.6Sb/AlSb heterostructure and demonstrates that hole mobility was enhanced by eliminating a parallel conducting channel in the buffer layers. Based on optimized growth conditions, hole mobility as high as 1220 cm2/V·s with carrier concentration of 1.3 ×1012 cm-2 was achieved. A 0.2- μm-gate-length In0.4Ga0.6Sb/AlSb p-channel device exhibited a maximum drain current of 102 mA/mm, a peak transconductance of 92 mS/mm, and an on-state breakdown voltage over 3 V. The pinchoff was observed for a gate bias of 0.6 V at drain current of 1 mA/mm. The current-gain and power-gain cutoff frequencies were 15 and 20 GHz, respectively.
Keywords :
III-V semiconductors; buffer layers; gallium compounds; high electron mobility transistors; hole mobility; indium compounds; microwave field effect transistors; InGaSb-AlSb; buffer layers; current-gain cutoff frequency; device characteristics; frequency 15 GHz; frequency 20 GHz; high-hole-mobility FET; on-state breakdown voltage; p-channel device; parallel conducting channel; power-gain cutoff frequency; size 0.2 mum; voltage 0.6 V; Buffer layers; HEMTs; Logic gates; MODFETs; Scattering; Temperature measurement; Heterojunction field-effect transistors (HFETs); InGaSb/AlSb;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2012.2193656
