Title :
A Novel Depletion-Mode a-IGZO TFT Shift Register With a Node-Shared Structure
Author :
Kim, Binn ; Cho, Hyung Nyuck ; Choi, Woo Seok ; Kuk, Seung-Hee ; Yoo, Juhn-Suk ; Yoon, Soo Young ; Jun, Myungchul ; Hwang, Yong-Kee ; Han, Min-Koo
Author_Institution :
R&D Center, LG Display, Paju, South Korea
fDate :
7/1/2012 12:00:00 AM
Abstract :
We proposed and fabricated a new depletion-mode amorphous indium-gallium-zinc-oxide thin-film-transistor (TFT) shift register with a node-shared structure. The proposed shift register requires 14 TFTs, 3 clock lines, and 3 power source lines for two output pulses, whereas the previous shift registers consisted of more than 22 TFTs, 4 clock lines, and 6 power source lines. The experimental results showed that the proposed shift register successfully generated two output pulses at one stage without any distortion. The circuit area of the proposed shift register is reduced by about 30%, as compared with that of the previous one.
Keywords :
II-VI semiconductors; amorphous semiconductors; gallium compounds; indium compounds; shift registers; thin film transistors; wide band gap semiconductors; zinc compounds; InGaZnO4; clock lines; depletion-mode a-IGZO TFT shift register; depletion-mode amorphous indium-gallium-zinc oxide thin-film-transistor shift register; node-shared structure; output pulses generation; power source lines; Clocks; Logic gates; SPICE; Shift registers; Simulation; Thin film transistors; Amorphous indium–gallium–zinc–oxide thin-film transistor (a-IGZO TFT); depletion mode; node-shared structure; shift register;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2012.2193655