Analytical Field-Effect Method for Extraction of Subgap States in Thin-Film Transistors

Author

Lee, Sungsik ; Ahnood, Arman ; Sambandan, Sanjiv ; Madan, Arun ; Nathan, Arokia

Author_Institution

London Centre for Nanotechnol., Univ. Coll. London, London, UK

Volume

33

Issue

7

fYear

2012

fDate

7/1/2012 12:00:00 AM

Firstpage

1006

Lastpage

1008

Abstract

We present an analytical field-effect method to extract the density of subgap states (subgap DOS) in amorphous semiconductor thin-film transistors (TFTs), using a closed-form relationship between surface potential and gate voltage. By accounting the interface states in the subthreshold characteristics, the subgap DOS is retrieved, leading to a reasonably accurate description of field-effect mobility and its gate voltage dependence. The method proposed here is very useful not only in extracting device performance but also in physically based compact TFT modeling for circuit simulation.

Keywords

amorphous semiconductors; circuit simulation; semiconductor device models; surface potential; thin film transistors; amorphous semiconductor TFT modelling; amorphous semiconductor thin-film transistor modelling; analytical field-effect mobility method; circuit simulation; closed-form relationship; gate voltage dependence; subgap DOS; subgap state density extraction; subthreshold characteristic; surface potential; Amorphous silicon; Interface states; Iron; Logic gates; Photoconductivity; Thin film transistors; Amorphous semiconductor thin-film transistors (TFTs); density of subgap states (subgap DOS); field-effect mobility;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2012.2193657

Filename

6199955